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Conference Papers
- C.-Y. Lai, F.-K. Sun, Z. Gao, J. H. Lang, D. S. Boning, Nominality Score Conditioned Time Series Anomaly Detection by Point/Sequential Reconstruction, Neural Information Processing Systems (NeurIPS), 2023.
[arXiv] [NeurIPS] [GitHub]
- C.-Y. Lai, F.-K. Sun, J. H. Lang, D. S. Boning, Unsupervised Multivariate Time Series Anomaly Detection for High-Frequency Data, Microsystems Annual Research Conference (MARC), (2023).
[proceedings]
- C.-Y. Lai, T.-H. He, W.-C. Huang, L.-C. Chen, MUC1 impedimetric aptasensing based on interdigitated array electrode chip using a novel diffusion element, 31st Anniversary World Congress on Biosensors, (2021). [poster pdf] [presentation clip]
- W.-C. Huang, C.-Y. Lai, T.-H. He, L.-C. Chen, Real-time impedimetric aptasensing of MUC1 by a microfluidic device with interdigitated array electrode chip, Accepted to the 31st Anniversary World Congress on Biosensors, (2021).
- C.-Y. Lai, J.-H. Weng, W.-L. Shih, L.-C. Chen, C.-F. Chou, P.-K. Wei, Diffusion impedance modeling for interdigitated array electrodes by conformal mapping and cylindrical finite length approximation, 11th International Symposia on Electrochemical Impedance Spectroscopy, (2019).
[abstract] [presentation pdf] [presentation clip]
- C.-Y. Lai, J.-H. Weng, L.-C. Chen, Real-time impedimetric MUC1 aptasensor using microfluidic symmetric Au electrodes, The Twenty Second International Conference on Miniaturized Systems for Chemistry and Life Sciences (µTAS), (2018).
[poster pdf]
- C.-Y. Lai, L.-C. Chen, EIS detection of MUC1 with two symmetric aptamer/Au electrodes, 22nd Topical Meeting of the International Society of Electrochemistry, (2018).
[abstract] [presentation pdf] [presentation clip]
- C.-Y. Lai, L.-C. Chen, The study of an impedimetric microfluidic chip design for mucin1 aptasensing, 64th TwIChE Annual Meeting, (2017). Outstanding Poster Award
[poster pdf]
- C.-Y. Lai, L.-C. Chen, Detection of mucin1 with a microfluidic impedimetric aptasensor, International Symposium on Smart-Sensing Medical Devices and 22nd Symposium of Association for Chemical Sensors in Taiwan, (2017).
[abstract] [presentation pdf] [presentation clip]
Journal Papers
- C.-Y. Lai, W.-C. Huang, J.-H. Weng, L.-C. Chen, C.-F. Chou, P.-K. Wei, Impedimetric aptasensing using a symmetric Randles circuit model, Electrochimica Acta, 337 (2020) 35750.
https://doi.org/10.1016/j.electacta.2020.135750
- C.-Y. Lai, J.-H. Weng, W.-L. Shih, L.-C. Chen, C.-F. Chou, P.-K. Wei, Diffusion impedance modeling for interdigitated array electrodes by conformal mapping and cylindrical finite length approximation, Electrochimica Acta, 320 (2019) 134629.
https://doi.org/10.1016/j.electacta.2019.134629
- J.-H. Weng, C.-Y. Lai, L.-C. Chen, Microfluidic amperometry with two symmetric Au microelectrodes under one-way and shuttle flow conditions, Electrochimica Acta, 297 (2019) 118-128.
https://doi.org/10.1016/j.electacta.2018.11.128
- M.-Y. Pan, D.-K. Yang, C.-Y. Lai, J.-H. Weng, K.-L. Lee, L.-C. Chen, C.-F. Chou, P.-K. Wei, Spectral contrast imaging method for mapping transmission surface plasmon images in metallic nanostructures, Biosensors and Bioelectronics, 142 (2019) 111545.
https://doi.org/10.1016/j.bios.2019.111545
Patents
- C.-Y. Lu, Y.-H. Chiu, C.-L. Chen, C.-Y. Lai, S.-H. Chiu, Source/drain isolation structure, layout, and method (U.S. Pub. No. US20230386998A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230386998A1
- C.-Y. Lu, C.-L. Chen, C.-T. Wu, C.-Y. Lai, S.-H. Chiu, First metal structure, layout, and method (U.S. Pub. No. US20230387011A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230387011A1
- C.-Y. Lu, C.-Y. Lai, M.-H. Wang, C.-L. Chen, S. H. Chiu, Semiconductor devices with reduced effect of capacitive coupling (U.S. Pub. No. US20230386997A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230386997A1
- C.-Y. Lai, H.-Z. Zhuang, C.-L. Chen, L.-C. Tien, Method of manufacturing integrated circuit (U.S. Pub. No. US20230387014A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230387014A1
- C.-Y. Lai, C.-L. Chen, C.-Y. Lu, C.-H. Wang, Semiconductor device including through via and method of making (U.S. Pub. No. US20230343703A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230343703A1
- P. Wang, C.-Y. Lai, C.-Y. Lu, S.-S. Chiu, H.-Z. Zhuang, C.-L. Chen,
Semiconductor cell and active area arrangement (U.S. Pub. No. US20230268339A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230268339A1
- C.-Y. Lai, C.-L. Chen, C.-Y. Lu, S.-S. Chiu, Arrangement of source or drain conductors of transistor (U.S. Pub. No. US20230154990A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230154990A1
- C.-Y. Lai, C.-L. Chen, C.-W. Tsai, S.-W. Chang, L.-C. Tien, Semiconductor device segmented interconnect (U.S. Pub. No. US20230067952A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230067952A1
- C.-Y. Lai, C.-L. Chen, L.-C. Tien, Integrated circuits having stacked transistors and backside power nodes (U.S. Pub. No. US20230067311A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230067311A1
- C.-Y. Lai, H.-Z. Zhuang, C.-L. Chen, L.-C. Tien, Integrated circuit conductive line arrangement for circuit structures, and method (U.S. Pub. No. US20230062140A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230062140A1
- C.-Y. Lai, C.-L. Chen, Integrated circuit and method of forming same (U.S. Pub. No. US20230050555A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230050555A1
- C.-Y. Lai, C.-L. Chen, C.-Y. Lu, S.-S. Chiu, Semiconductor device and method of making (U.S. Pub. No. US20230008866A1), U.S. Patent and Trademark Office, (2023).
https://patents.google.com/patent/US20230008866A1
- C.-Y. Lai, C.-L. Chen, C.-Y. Lu, S.-S. Ciou, H.-Z. Zhuang, C.-W. Tsai, S.-W. Chang, Semiconductor device having self-aligned interconnect structure and method of making (U.S. Pub. No. US20220336325A1), U.S. Patent and Trademark Office, (2022).
https://patents.google.com/patent/US20220336325A1
- C.-Y. Lai, C.-L. Chen, C.-Y. Lu, S.-S. Ciou, H.-Z. Zhuang, C.-W. Tsai, S.-W. Chang, Amphi-fet structure, method of making and method of designing (U.S. Pub. No. US20220310591A1), U.S. Patent and Trademark Office, (2022).
https://patents.google.com/patent/US20220310591A1
Degree Thesis and Preprint (non-peer reviewed)